氧化锌薄膜的光电特性研究进展The Progress in the Research on Optoelectronic Properties of ZnO Thin Filmss
张铭杨,李世帅
摘要(Abstract):
由于氧化锌特殊的结构及在光电等方面的广泛应用,关于氧化锌的光电方面的研究引起了人们极大的兴趣.综述了氧化锌薄膜在短波激光、透过率、电子特性方面的研究进展,对今后的研究方向进行了展望.
关键词(KeyWords): 氧化锌薄膜;光电特性;进展
基金项目(Foundation): 山东省自然科学基金资助项目(Y2008A21);; 济南大学博士基金资助项目(XBS0833)
作者(Author): 张铭杨,李世帅
DOI: 10.16393/j.cnki.37-1436/z.2009.05.018
参考文献(References):
- [1]Yamada M,Mishina Y.Dyanmics of dense excitonic sys-tems in ZnSe-based single quantum wells[J].PhysicsReview B,1995,52(4):82289-82292.
- [2]Maruska HP,Tietjen J J.The preparation and propertiesof vapor-deposited single-crystal-line GaN[J].Ap-pl.Phys.Lett.,1969,15(10):327-329.
- [3]Yu P,Tang Z K,Wong G KL,et al.Room Temperaturestimulated emission from ZnO quantum dot films[J].World Scientific,Singapore,1996,2(3):1453-1456.
- [4]Huang MH,Mao S,Feich H,et al.Room-temperatureultravolet nanowire nanolasers[J].Science,2001,292(5523):1897-1899.
- [5]Zu P,Tang Z K,Wong G K L,et al.Ultraviolet sponta-neous and stimulated emissions from ZnO microcrystallitefilms at room temperature[J].Solid State commun,1997,103(8):459-463.
- [6]Zhang D H.Fast Photoresponse ZnO Films Deposited byrf Bias Sputtering[J].Chinese Journal Of Semiconduc-tors,1995,16(10):779-782.
- [7]Fu Z X,Lin B X,Liao G H,et al.Superlinear increasephenomenon of UV luminescence of ZnO film under cath-odoluminescent excitation[J].J.Cryst.Grow,1998,193(3)316-320.
- [8]Dingle R.Luminescent Transitions Associated With Diva-lent Copper Impurities and the Green Emission fromSemiconducting Zinc Oxide[J].Phys.Rev.Lett.,1969,23(11):579-581.
- [9]de Van-Walle C G.Hydrogen as a Cause of Doping inZinc Oxide[J].Phys.Rev.Lett.,2000,85(5):1012-1015.
- [10]Wang Y G,Lau S P,Lee H W,et al.Comprehesivestudy of ZnO films prepared by filtered cathodic vacuumarc at room temperature[J].J.Appl.Phys,2003,94(3):1597-1604.
- [11]Jin B J,Woo H S,Im S,et al.Relationship betweenphotoluminescence and electrical properties of ZnO thinfilms grown by pulsed laser deposition[J].Appl.Surf.Sci,2001,169~170(15):521-524.
- [12]Yoshino Y,Makino T,Katayama Y,et al.Optimizationof zinc oxide thin film for surface acoustic wave filters byradio frequency sputtering[J].Vacuum.,2000,59(2):538-545.
- [13]Seo S H,Shin W C,Park J S.A novel method of fabri-cating ZnO/diamond/Si multilayers for surface acousticwave(SAW)device applications[J].Thin SolidFilms,2002,416(1~2):190-196.
- [14]Rozgonyi G A,Polito W J.Characterization of ZnO ThinFilm and Its Applications on Communication Devicesand Liquid Sensors[J].Appl.Phys.Lett.,1966,8(9):220-221.
- [15]Gorla C R,Emanetoglu N W,Liang S,et al.Charac-terization of ZnO Thin Film and Its Applications on Com-munication Devices and Liquid Sensors[J].J.Appl.Phys,1999,85(5):2595-2602.
- [16]曹鸿涛.ZnO:Al(ZAO)薄膜的特性研究[D].沈阳:中国科学院金属研究所,2004.
- [17]Minami T,Nanto H,Takata S.High conductive andtransparent Aluminum doped Zinc oxide thin films pre-pared by RF magnetron sputtering[J].Jpn.J.Appl.Phys,1984,23(1):280-282.
- [18]Lee E C,Kim Y S,Jin Y C,et al.Compensationmechanism for N acceptors in ZnO[J].Phys.Rev.B,2001,64(9):085120-085123.
- [19]Xiong G,Wilkinson J,Mischuck B,et al.Control of p-and n-type Conductivity in Sputter Deposition ofUndoped ZnO[J].Appl.Phys.Lett.,2002,80(4):1195-1197.
- [20]Look D C,Claflin B.P-type doping and devices basedon ZnO[J].Phys.Stat.Sol(b),2004,241(3):624-630.
- [21]Guo X L,Tabata H,Kawai T.Pulsed laser reactivedeposition of p-type ZnO film enhanced by an electroncyclotron resonance source[J].Journal of CrystalGrowth,2001,223(1~2):135-139.
- [22]Chen F G,Ye Z Z,Xu W Z,et al.Fabrication of p-type ZnO thin films via MOCVD method by using phos-phorus as dopant source[J].J.Crystal Growth,2005,281(2~4):458-462.
- [23]Look D C,Renlund G M,Burgener R H,et al.As-doped p-type ZnO produced by an evaporation sputte-ring process[J].Appl.Phys.Lett.,2004,85(22):5269-5271.
- [24]Krtschil A,Dadgar A,Oleynik N,et al.Zinc oxide dual-doped with nitrogen and arsenic[J].Appl.Phys.Lett.,2005,87(26):2105-2108.
- [25]Alivov Y I,Kalinina E V,Cherenkov AE,et al.Single-Crystal n-type ZnO[J].Appl.Phys.Lett.,2003,83(8):4719-4721.
- [26]诸葛飞.Al-N共掺法生长p型ZnO及ZnO同质p-n结的制备[D].杭州:浙江大学,2005.
- [27]徐伟中.MOCVD方法生长单晶ZnO、p型掺杂及同质ZnO-LED室温电致发光研究[D].杭州:浙江大学,2006.
- [28]赵伯钧.声表面波用ZnO薄膜的制备及器件的初步研究[D].长春:吉林大学,2004.