机械化学抛光中晶圆材料切削率和非均匀性有限元模型(英文)A Finite Element Model for Wafer Materiall Removal Rate and Non-uniformity in Chemical Mechanical Polishing Process
郭跃彬
摘要(Abstract):
提出了一个机械化学抛光中晶圆材料非均匀性的有限元模型.通过分析压力、摩擦力、抛光垫和承载膜的可压缩性对晶圆的应力分布的影响,研究了抛光过程中晶圆厚度的不均匀性.结果证明非均匀剪应力是晶圆厚度变化的一个主要原因这个模型也建立了声发射信号的变化和晶圆厚度不均匀性的关系.通过对晶圆材料切削率的声发射信号监测,证明了实验结果和模型预测值的一致性.
关键词(KeyWords): 机械化学抛光;声发射;有限元方法;非均匀性;晶圆
基金项目(Foundation):
作者(Author): 郭跃彬
DOI: 10.16393/j.cnki.37-1436/z.2001.04.002
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