溅射功率对ZnO∶Mn薄膜结构、应力和光电性能的影响Effect of the Sputtering Power on the Structure,Stress and the Photoelectric Property of ZnO ∶ Mn Films
臧永丽,刘景伦
摘要(Abstract):
利用直流磁控溅射法,在玻璃衬底上制备掺锰氧化锌(Zn O∶Mn)透明导电薄膜.研究了溅射功率对薄膜结构、力学性能和光电性能的影响.功率对薄膜应力影响不是很大,且应力均为负值,表现为压应力.溅射功率通过改变晶粒尺寸和结晶程度而影响薄膜的导电性能:当溅射功率为135 W时,薄膜的电阻率具有最小值为1.10×10-2Ω·cm.实验表明,功率是影响Zn O∶Mn薄膜性能的一个重要参量.
关键词(KeyWords): ZnO∶Mn薄膜;透明导电薄膜;磁控溅射;溅射功率
基金项目(Foundation):
作者(Author): 臧永丽,刘景伦
DOI: 10.16393/j.cnki.37-1436/z.2015.02.009
参考文献(References):
- [1]Meng Z G.,Peng H J,Wu C Y,et al.Room temperature deposition of thin-film indium-tin oxide on micro-fabricated color filters and its application to flat-panel displays[J].Journal of Optoelectronics Laser,2005,16(2):140-145.
- [2]李世涛,乔学亮,陈建国.透明导电薄膜的研究现状及应用[J].激光与光电子学进展,2003,40(7):53-59.
- [3]Pei Z L,Sun C,Tan M H,et al.Optical and electrical properties of direct-current magnetron sputtered Zn O:Al films[J].J.Appl.Phys.,2001,90(7):3432-3436.
- [4]Yang T L,Zhang D H,Ma J,et al.Transparent conducting Zn O:Al films deposited on organic substrates deposited by r.f.magnetron-sputtering[J].Thin solid films,1998,326(1-2):60-62.
- [5]Zhang H F,Lei C X,Liu H F,et al.Low-temperature deposition of transparent conducting Zn O:Zr films on PET substrates by DC magnetron sputtering[J].Applied Surface Science,2009,255(11):6054-6056.
- [6]Lv M S,Xiu X W,Pang Z Y,et al.Transparent conducting zirconium doped zinc oxide films prepared by rf magnetron sputtering[J].Applied Surface Science,2005,252(5):5687-5692.
- [7]Assuncan V,Marques A,Aguas H,et al.Influence of the deposition pressure on the properties of transparent and conductive Zn O:Ga thin-film produced by r.f.sputtering at room temperature[J].Thin solid Films,2003,427(1-2):401-405.
- [8]Ma Q B,Ye Z Z,He H P,et al.Structural,electrical,and optical properties of transparent conductive Zn O:Ga films prepared by DC reactive magnetron sputtering[J].Journal of Crystal Growth,2007,304(1):64-68.
- [9]Lina S S,Huangga J L,Sajgalik P.The properties of Tidoped Zn O films deposited by simultaneous RF and DC magnetron sputtering[J].Surf Coat Technol,2005,191:266-292.
- [10]Lu Y M,Chang C M,Tsai S I,et al.Improving the conductance of Zn O thin films by doping with Ti[J].Thin Solid Films,2004,447-448:56-60.
- [11]Cheng X M,Chien C L.Magnetic properties of epitaxial Mn-doped Zn O thin films[J].J.Appl.Phys.,2003,93:7876-7878.
- [12]任明放,王华,许积文,等.室温溅射制备氧化锌铝薄膜及电性能研究[J].太阳能学报,2009,30(3):344-347.
- [13]Hong R J,Shao J D,He H B,et al.Influence of buffer layer thickness on the structure and optical properties of Zn O thin films[J].Applied Surface Science,2006,252(8):2888-2893.
- [14]Zhang D H,Yang T L,Ma J,et al.Preparation of transparent conducting Zn O∶Al films on polymer substrates by r.f.magnetron sputtering[J].Applied surface Science,2000,158:43-48.
- [15]孙奉娄,惠述伟.衬底温度对射频溅射沉积ZAO透明导电薄膜性能的影响[J].中国民族大学学报(自然科学版),2009,28(2):10-13.
- [16]余旭浒,马谨,计峰,等.薄膜厚度对Zn O∶Ga透明导电膜性能的影响[J].功能材料,2005,36(2):241-243.