楼刚

• 1:浙江师范大学

摘要(Abstract)：

本文采用控制炉温法对8×15mil蓝光LED芯片在不同驱动电流、不同炉温下的电压进行了测量,考察了结电压与温度以及串联电阻与温度的关系曲线。根据串联电阻温度曲线,计算获得了p型氮化镓载流子迁移率与温度变化关系~T-2.40;根据结电压温度曲线,获得结电压温度系数与驱动电流呈近似对数递减关系,此关系与结电压温度系数理论关系不符,其原因可能是载流子在多重量子阱中的隧穿效应、压电效应等降低了实际结电压。结电压温度系数在40mA以上时近似常数-1.65 mV/℃,与理论值-1.2mV/℃相近。因串联电阻与温度的非线性关系,电压温度系数法在大电流密度或高结温下已经失效,须考虑串联电阻的温度效应才能获得较准确结温.

关键词(KeyWords)： 电压温度系数;LED;驱动电流

Abstract:

Keywords:

基金项目(Foundation): 浙江师范大学校青年基金项目(KYJ06Y12138);; Zhejiang Provincial Science and Technology Key Innovation Team(No.2011R50012)and Key Laboratory(No.2013E10022)资助

作者(Author): 楼刚

DOI: 10.16393/j.cnki.37-1436/z.2015.05.011

参考文献(References)：

• [1]Shuji Nakamura,Takashi Mukai,and Masayuki Senoh.Candela-class high-brightness InGaN/AIGaN double-heterostructure blue-light-emitting diodes[J].Appl.Phys.Lett.,1994,64(13).
• [2]Shuji Nakamura,Takashi Mukai,and Masayuki Senoh.High-brightness InGaN/AIGaN double-heterostructure blue-greenlightemitting diodes[J].J.Appl.Phys.,1994,76(12).
• [3]LEDinside.2013年中国照明市场报告[EB/OL].www.LEDinside.com,2013.
• [4]Y.Xi,J.-Q.Xi,Th.Gessmann,J.M.Shah,J.K.Kim,and E.F.Schubert.Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods[J].Appl.Phys.Lett.,2005,86(031907).
• [5]Y.Xi and E.F.Schubert.Junction–temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method[J],Appl.Phys.Lett.,2004,85(12).
• [6]David S.Meyaard,Jaehee Cho,E.Fred Schubert,Sang-Heon Han,Min-Ho Kim,and Cheolsoo Sone.Analysis of the temperature dependence of the forward voltage characteristics of GaInN light-emitting diodes[J],Appl.Phys.Lett.,2013,103(121103).
• [7]T.Tanaka,A.Watanabe,H.Amano,Y.Kobayashi,I.Akasaki,S.Yamazaki,and M.Koike.p-type conduction in Mg-doped GaN and Al0.08Ga0.92Ngrown by metalorganic vapor phase epitaxy[J],Appl.Phys.Lett.,1994,65(593).
• [8]D.J.Kim,D.Y.Ryu,N.A.Bojarczuk,J.Karasinski,S.Guha,S.H.Lee,and J.H.Lee.Thermal activation energies of Mg in GaN:Mg measured by the Hall effect and admittance spectroscopy[J].J.Appl.Phys.,2004,88(2564).
• [9]Orest Malyk.Charge carrier mobility in gallium nitride[J].Diamond Relat.Mater.,2012,23:23–27.
• [10]D.C.Look,Z.-Q.Fang,B.Claflin.Identification of donors,acceptors and traps in bulk-like HVPE GaN[J].J.Cryst.Growth,2005,281:143–150.